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TIP140/141/142
TIP140/141/142
Monolithic Construction With Built In BaseEmitter Shunt Resistors
* High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) * Industrial Use * Complement to TIP145/146/147
1
TO-3P
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : TIP140 : TIP141 : TIP142 Value 60 80 100 60 80 100 5 10 15 0.5 125 150 - 65 ~ 150 Units V V V V V V V A A A W C C
1.Base 2.Collector 3.Emitter
Equivalent Circuit C
VCEO
Collector-Emitter Voltage : TIP140 : TIP141 : TIP142 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature
B
VEBO IC ICP IB PC TJ TSTG
R1
R2 E
R1 8k R2 0.12k
Electrical Characteristics TC=25C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : TIP140 : TIP141 : TIP142 Collector Cut-off Current : TIP140 : TIP141 : TIP142 ICBO Collector Cut-off Current : TIP140 : TIP141 : TIP142 IEBO hFE VCE(sat) VBE(sat) VBE(on) tD tR tSTG tF Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter ON Voltage Delay Time Rise Time Storage Time Fall Time VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 5A VCE = 4V, IC = 10A IC = 5A, IB = 10mA IC = 10A, IB = 40mA IC = 10A, IB = 40mA VCE = 4V, IC = 10A VCC = 30V, IC = 5A IB1 = 20mA, IB2 = -20mA RL = 6 0.15 0.55 2.5 2.5 1000 500 2 3 3.5 3 V V V V s s s s
Rev. A, February 2000
Test Condition IC = 30mA, IB = 0
Min. 60 80 100
Typ.
Max.
Units V V V
ICEO
VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0
2 2 2 1 1 1 2
mA mA mA mA mA mA mA
(c)2000 Fairchild Semiconductor International
TIP140/141/142
Typical Characteristics
10
IB = 2000uA
9
IB =
1200
IC[A], COLLECTOR CURRENT
IB = 1800uA
8 7 6 5 4
0u 100 IB =
uA
100k
A
IB = 800uA IB = 600uA
V CE = 4V
IB = 1600uA IB = 1400uA
IB = 400uA
hFE, DC CURRENT GAIN
10k
1k
IB = 200uA
3 2 1 0 0 1 2 3 4 5
100
10 0.1
1
10
100
V CE[V], COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
1000
IC =500IB
f=0.1MHz
VBE(sat)
1
V CE(sat)
Cob[pF], CAPACITANCE
10 100
100
0.1
0.01 0.1
10 1 1 10 100 1000
IC[A], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
100
150
IC[A], COLLECTOR CURRENT
125
PC[W], POWER DISSIPATION
10
100
D C
75
1
50
TIP140 TIP141 TIP142
25
0.1 1 10 100 1000
0 0 25 50
o
75
100
125
150
175
V CE [V], COLLECTOR-EMITTER VOLTAGE
TC[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
(c)2000 Fairchild Semiconductor International
Rev. A, February 2000
TIP140/141/142
Package Demensions
TO-3P
15.60 0.20
3.80 0.20
13.60 0.20 o3.20 0.10 9.60 0.20
4.80 0.20 1.50 -0.05
+0.15
12.76 0.20
19.90 0.20
16.50 0.30
3.00 0.20 1.00 0.20
3.50 0.20
2.00 0.20
13.90 0.20
23.40 0.20
18.70 0.20
1.40 0.20
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.60 -0.05
+0.15
Dimensions in Millimeters
(c)2000 Fairchild Semiconductor International Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM
DISCLAIMER
HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2000 Fairchild Semiconductor International
Rev. E

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